Samsung M4 70T2864QZ3-CF7 1GB vs Kingston 9905701-004.A00G 16GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Kingston 9905701-004.A00G 16GB

Kingston 9905701-004.A00G 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值

Kingston 9905701-004.A00G 16GB

需要考虑的原因
Kingston 9905701-004.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 74

左右 -208% 更低的延时
更快的写入速度，GB/s

7.3 2,201.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905701-004.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 24
读取速度，GB/s

4,178.4 14.7
写入速度，GB/s

2,201.1 7.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 2321

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905701-004.A00G 16GB

Kingston 9905701-004.A00G 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C16-8GVKBN 8GB

G Skill Intl F4-3200C16-8GVKBN 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Golden Empire CL15-15-15 D4-3000 8GB

Golden Empire CL15-15-15 D4-3000 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4000C19-4GVK 4GB

G Skill Intl F4-4000C19-4GVK 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB