Samsung M4 70T2864QZ3-CF7 1GB vs Ramaxel Technology RMSA3340MB88HBF-3200 16GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.4

测试中的平均数值
更快的写入速度，GB/s

2,201.1 13.7

测试中的平均数值

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

需要考虑的原因
Ramaxel Technology RMSA3340MB88HBF-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

52 74

左右 -42% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 52
读取速度，GB/s

4,178.4 16.4
写入速度，GB/s

2,201.1 13.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

508 2893

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

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Kingston KHX3000C15D4/8GX 8GB

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Kingston KP6FH5-MIE 32GB

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Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-3600C16-8GTZN 8GB

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Samsung M393B1G70QH0-YK0 8GB

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Crucial Technology BLM16G40C18U4BL.M8FB 16GB

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Kingston 9905734-082.A00G 16GB

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SK Hynix HMA425S6BJR6N-UH 2GB

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Samsung M471A1K43EB1-CWE 8GB

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Crucial Technology BLS4G4D240FSC.M8FADG 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

Samsung M4 70T2953EZ3-CE6 1GB

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Kingston 9905744-006.A00G 16GB

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Samsung M393A1G40DB0-CPB 8GB

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Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB