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Samsung M4 70T2864QZ3-CF7 1GB
Samsung M378A1K43BB2-CTD 8GB

Samsung M4 70T2864QZ3-CF7 1GB vs Samsung M378A1K43BB2-CTD 8GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 13.8
    测试中的平均数值
Samsung M378A1K43BB2-CTD 8GB 需要考虑的原因
Samsung M378A1K43BB2-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 74
    左右 -252% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M378A1K43BB2-CTD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 21
  • 读取速度，GB/s
    4,178.4 left arrow 17.9
  • 写入速度，GB/s
    2,201.1 left arrow 13.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3167

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

Samsung M378A1K43BB2-CTD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
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Essencore Limited IM48GU88N21-FFFHM 8GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
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G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Avant Technology W642GU44J2320NC 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Mushkin 99[2/7/4]197F 8GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Samsung M471A2K43EB1-CWE 16GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
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Corsair CMK16GX4M2C3600C20 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingston KHX3200C20S4/16G 16GB
Kingston KHX3200C20S4/16G 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KF2933C17S4/16G 16GB
Kingston KF2933C17S4/16G 16GB
内存RAM