Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BLT8G4D30AETA.K16FD 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.8

测试中的平均数值

Crucial Technology BLT8G4D30AETA.K16FD 8GB

需要考虑的原因
Crucial Technology BLT8G4D30AETA.K16FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 69

左右 -306% 更低的延时
更快的写入速度，GB/s

16.8 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 17
读取速度，GB/s

3,325.1 20.8
写入速度，GB/s

1,441.2 16.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 3623

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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INTENSO 5641152 4GB

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Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Kingston 8ATF1G64AZ-2G1B1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240