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Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Patriot Memory (PDP Systems) 4000 C20 Series 8GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.4
    测试中的平均数值
Patriot Memory (PDP Systems) 4000 C20 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 69
    左右 -146% 更低的延时
  • 更快的写入速度，GB/s
    15.4 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 28
  • 读取速度，GB/s
    3,325.1 left arrow 19.4
  • 写入速度，GB/s
    1,441.2 left arrow 15.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    525 left arrow 3594

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
内存RAM
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Samsung M4 70T2864QZ3-CE6 1GB
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Crucial Technology CT16G4DFD8213.C16FAD 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905624-016.A00G 8GB
Kingston 9905624-016.A00G 8GB
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Kingston 9905458-026.A00LF 4GB
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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
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Samsung M3 78T2863QZS-CF7 1GB
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Kingston 9905624-004.A00G 4GB
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Samsung M378A2K43DB1-CVF 16GB
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内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston KYXC0V-MIH 16GB
Kingston KYXC0V-MIH 16GB
内存RAM
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AMD R5S38G1601U2S 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA82GU6AFR8N-UH 16GB
SK Hynix HMA82GU6AFR8N-UH 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM