Samsung M4 70T5663CZ3-CE6 2GB vs Team Group Inc. TEAMGROUP-UD4-2800 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值

Team Group Inc. TEAMGROUP-UD4-2800 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-2800 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 69

左右 -214% 更低的延时
更快的写入速度，GB/s

12.7 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 22
读取速度，GB/s

3,325.1 17.5
写入速度，GB/s

1,441.2 12.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2960

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-4400C18-8GTZR 8GB

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Kingston KHX1600C9S3L/4G 4GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB