Samsung M4 70T5663CZ3-CE6 2GB vs Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

需要考虑的原因
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 69

左右 -200% 更低的延时
更快的写入速度，GB/s

7.3 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 23
读取速度，GB/s

3,325.1 14.7
写入速度，GB/s

1,441.2 7.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2476

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK32GX4M4D3000C16 8GB

Corsair CMK32GX4M4D3000C16 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Crucial Technology CT16G4DFRA266.M16FR 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CMW32GX4M2Z3600C18 16GB

Corsair CMW32GX4M2Z3600C18 16GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB