Samsung M4 70T5663QZ3-CF7 2GB vs Gloway International Co. Ltd. STK4U2400D17082C 8GB

总分

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

Gloway International Co. Ltd. STK4U2400D17082C 8GB

需要考虑的原因
Gloway International Co. Ltd. STK4U2400D17082C 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 64

左右 -191% 更低的延时
更快的写入速度，GB/s

12.9 1,869.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CF7 2GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 22
读取速度，GB/s

4,477.7 17.5
写入速度，GB/s

1,869.1 12.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

697 3083

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KTP9W1-MID 16GB

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Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

Kingston 9905403-038.A00LF 4GB

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Teikon TMA81GU6AFR8N-UHSC 8GB

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SK Hynix HMT351S6BFR8C-H9 4GB

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SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB