Samsung M4 70T5663QZ3-CF7 2GB vs Samsung M4 70T5663QZ3-CE6 2GB

总分

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

64 68

左右 6% 更低的延时
更快的读取速度，GB/s

4 3

测试中的平均数值
更快的写入速度，GB/s

1,869.1 1,702.6

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21% 更高的带宽

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CE6 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

64 68
读取速度，GB/s

4,477.7 3,886.6
写入速度，GB/s

1,869.1 1,702.6
内存带宽，mbps

6400 5300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

697 654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Transcend Information JM3200HLE-16G 16GB

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Samsung M4 70T5663QZ3-CF7 2GB

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A-DATA Technology VDQVE1B16 2GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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Micron Technology 16G3200CL22 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston KVR800D2N6/2G 2GB

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Crucial Technology CT16G4DFD824A.C16FE 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

Kingston K1N7HK-ELC 2GB

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Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

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