Samsung M471A1K43CB1-CRC 8GB vs SK Hynix HMAA1GS6CJR6N-XN 8GB

总分

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

总分

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

差异规格评论

差异

Samsung M471A1K43CB1-CRC 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 54

左右 31% 更低的延时

SK Hynix HMAA1GS6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GS6CJR6N-XN 8GB

报告一个错误

更快的读取速度，GB/s

15.7 13.9

测试中的平均数值
更快的写入速度，GB/s

11.6 9.9

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471A1K43CB1-CRC 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 54
读取速度，GB/s

13.9 15.7
写入速度，GB/s

9.9 11.6
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2389 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-YH9 8GB

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INTENSO M418039 8GB

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G Skill Intl F4-3600C18-16GTRS 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston KVR24N17S8/4 4GB

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Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

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Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB