Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-4500C19-8GTZSWE 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-4500C19-8GTZSWE 8GB

需要考虑的原因
G Skill Intl F4-4500C19-8GTZSWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 38

左右 -171% 更低的延时
更快的读取速度，GB/s

25.1 15.5

测试中的平均数值
更快的写入速度，GB/s

19.3 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 14
读取速度，GB/s

15.5 25.1
写入速度，GB/s

12.0 19.3
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 4182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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InnoDisk Corporation 16GB

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Avant Technology J642GU42J7240N2 16GB

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G Skill Intl F5-6400J3239G16G 16GB

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Golden Empire CL16-16-16 D4-2800 8GB

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Apacer Technology 78.C1GS7.AUW0B 8GB

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Kingston 99U5595-005.A00LF 2GB

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G Skill Intl F4-3200C14-8GTRS 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

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V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

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Kingston 9965525-155.A00LF 8GB

Corsair CMD16GX4M4B3600C18 4GB

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