Samsung M471B1G73QH0-YK0 8GB vs Crucial Technology CT4G4DFS8213.M8FA 4GB

总分

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

总分

Crucial Technology CT4G4DFS8213.M8FA 4GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

差异规格评论

差异

Samsung M471B1G73QH0-YK0 8GB

需要考虑的原因
Samsung M471B1G73QH0-YK0 8GB

报告一个错误

Crucial Technology CT4G4DFS8213.M8FA 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.M8FA 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 47

左右 -42% 更低的延时
更快的读取速度，GB/s

14.8 11.8

测试中的平均数值
更快的写入速度，GB/s

10.6 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT4G4DFS8213.M8FA 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 33
读取速度，GB/s

11.8 14.8
写入速度，GB/s

8.0 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2061 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905316-106.A02LF 1GB

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Corsair CMD16GX4M4B3200C16 4GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9965643-002.A01G 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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AMD AE34G2139U2 4GB

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Corsair CM4B8G7L2666A16K2-O 8GB

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Corsair CMW32GX4M4C3466C16 8GB

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Corsair CMT64GX4M4K3600C16 16GB

Corsair CMT64GX4M4K3600C16 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB