Samsung M471B5173CB0-YK0 4GB vs Nanya Technology NT4GC64B8HB0NS-CG 4GB

总分

Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

总分

Nanya Technology NT4GC64B8HB0NS-CG 4GB

Nanya Technology NT4GC64B8HB0NS-CG 4GB

差异规格评论

差异

Samsung M471B5173CB0-YK0 4GB

需要考虑的原因
Samsung M471B5173CB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

11.9 11.7

测试中的平均数值
更快的写入速度，GB/s

7.9 7.6

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Nanya Technology NT4GC64B8HB0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HB0NS-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 42

左右 -5% 更低的延时

规格

完整的技术规格清单

Samsung M471B5173CB0-YK0 4GB

Nanya Technology NT4GC64B8HB0NS-CG 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 40
读取速度，GB/s

11.9 11.7
写入速度，GB/s

7.9 7.6
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1979 1893

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

Nanya Technology NT4GC64B8HB0NS-CG 4GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 18ASF1G72PDZ-2G6E1 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMSX32GX4M2A2400C16 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Crucial Technology CB8GS2400.C8D 8GB

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Samsung M471B5673FH0-CH9 2GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

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V-Color Technology Inc. TA48G32S816SK 8GB

V-Color Technology Inc. TA48G32S816SK 8GB