Samsung M471B5173EB0-YK0 4GB vs Kingston 9905598-025.A00G 8GB

总分

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

差异规格评论

差异

Samsung M471B5173EB0-YK0 4GB

需要考虑的原因
Samsung M471B5173EB0-YK0 4GB

报告一个错误

更快的写入速度，GB/s

8.2 6.8

测试中的平均数值

Kingston 9905598-025.A00G 8GB

需要考虑的原因
Kingston 9905598-025.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 44

左右 -76% 更低的延时
更快的读取速度，GB/s

13.4 13

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173EB0-YK0 4GB

Kingston 9905598-025.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 25
读取速度，GB/s

13.0 13.4
写入速度，GB/s

8.2 6.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2069 2045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL8G30C15U4R.8FE 8GB

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Corsair CMK16GX4M2Z2666C16 8GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston 99U5584-004.A00LF 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Mushkin 99[2/7/4]192F 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB