Samsung M471B5173EB0-YK0 4GB vs Mushkin 99[2/7/4]199F 8GB

总分

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分

Mushkin 99[2/7/4]199F 8GB

Mushkin 99[2/7/4]199F 8GB

差异规格评论

差异

Samsung M471B5173EB0-YK0 4GB

需要考虑的原因
Samsung M471B5173EB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

13 12.7

测试中的平均数值

Mushkin 99[2/7/4]199F 8GB

需要考虑的原因
Mushkin 99[2/7/4]199F 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 44

左右 -63% 更低的延时
更快的写入速度，GB/s

10.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173EB0-YK0 4GB

Mushkin 99[2/7/4]199F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 27
读取速度，GB/s

13.0 12.7
写入速度，GB/s

8.2 10.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2069 2536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX64GX4M2A3200C22 32GB

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Samsung M471B5173EB0-YK0 4GB

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Mushkin 99[2/7/4]199F 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston 9965643-006.A01G 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kingston 9905471-002.A00LF 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Apacer Technology AQD-SD4U4GN24-SG 4GB

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Kingston 9905744-066.A00G 32GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

SK Hynix GKE800SO51208-2133AH 8GB

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Kingston 9905403-038.A00G 4GB

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Kingston X5H5PW-MIB 8GB

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Kingston 9905403-011.A03LF 2GB

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Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Kingston KVR16N11/8-SP 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N