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Samsung M471B5173EB0-YK0 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB

Samsung M471B5173EB0-YK0 4GB vs Patriot Memory (PDP Systems) PSD38G13332 8GB

总分
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD38G13332 8GB

Patriot Memory (PDP Systems) PSD38G13332 8GB

差异 规格 评论

差异

Samsung M471B5173EB0-YK0 4GB 需要考虑的原因
Samsung M471B5173EB0-YK0 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Patriot Memory (PDP Systems) PSD38G13332 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD38G13332 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 44
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 13
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471B5173EB0-YK0 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    44 left arrow 39
  • 读取速度，GB/s
    13.0 left arrow 13.9
  • 写入速度，GB/s
    8.2 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2069 left arrow 2339

Samsung M471B5173EB0-YK0 4GB RAM的比较

SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB

Patriot Memory (PDP Systems) PSD38G13332 8GB RAM的比较

Crucial Technology CT102464BA1339.M16 8GB
SK Hynix HMT31GR7CFR4A-H9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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