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Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
比较
Samsung M471B5173QH0-YK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
更快的读取速度,GB/s
12.3
7.8
测试中的平均数值
更快的写入速度,GB/s
8.0
6.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
45
左右 -10% 更低的延时
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
41
读取速度,GB/s
12.3
7.8
写入速度,GB/s
8.0
6.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
1512
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM的比较
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology GD2.1527CS.001 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Samsung M471B5673FH0-CF8 2GB
Kingston KHX4800C19D4/8GX 8GB
ASint Technology SSA302G08-EGN1C 4GB
Samsung M393A1G40DB1-CRC 8GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMD64GX4M8A2666C15 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMD32GX4M4B3333C16 8GB
Samsung M4 70T2864QZ3-CE6 1GB
G Skill Intl F4-2400C16-8GFX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2666C18-4GRS 4GB
报告一个错误
×
Bug description
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