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Samsung M471B5173QH0-YK0 4GB
Kingston SNY1333D3S9ELC/4G 4GB

Samsung M471B5173QH0-YK0 4GB vs Kingston SNY1333D3S9ELC/4G 4GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Kingston SNY1333D3S9ELC/4G 4GB

Kingston SNY1333D3S9ELC/4G 4GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    12.3 left arrow 8.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 4.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Kingston SNY1333D3S9ELC/4G 4GB 需要考虑的原因
Kingston SNY1333D3S9ELC/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 -55% 更低的延时

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Kingston SNY1333D3S9ELC/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 29
  • 读取速度，GB/s
    12.3 left arrow 8.3
  • 写入速度，GB/s
    8.0 left arrow 4.5
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 1196

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Kingston SNY1333D3S9ELC/4G 4GB RAM的比较

Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Kingston SNY1333D3S9ELC/4G 4GB
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内存RAM
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内存RAM
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内存RAM