RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
比较
Samsung M471B5273CH0-CH9 4GB vs A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
总分
Samsung M471B5273CH0-CH9 4GB
总分
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
需要考虑的原因
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
48
左右 -71% 更低的延时
更快的读取速度,GB/s
15
8.9
测试中的平均数值
更快的写入速度,GB/s
9.5
5.9
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
48
28
读取速度,GB/s
8.9
15.0
写入速度,GB/s
5.9
9.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1420
2932
Samsung M471B5273CH0-CH9 4GB RAM的比较
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD AE34G1601U1 4GB
Samsung M378A5143TB2-CTD 4GB
A-DATA Technology DDR3 1333G 2GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Kingston 99U5584-017.A00LF 4GB
Kingston RB26D4U9D8MEH-16 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMD16GX4M4C3200C16 4GB
Corsair CML8GX3M2A1866C9 4GB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMD16GX4M4B3200C16 4GB
Kingston 9905702-010.A00G 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
PNY Electronics PNY 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-2666C15-4GVR 4GB
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMK16GX4M4B3400C16 4GB
报告一个错误
×
Bug description
Source link