Samsung M471B5273CH0-CH9 4GB vs Avexir Technologies Corporation T 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Avexir Technologies Corporation T 4GB

Avexir Technologies Corporation T 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Avexir Technologies Corporation T 4GB

需要考虑的原因
Avexir Technologies Corporation T 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 48

左右 -129% 更低的延时
更快的读取速度，GB/s

18 8.9

测试中的平均数值
更快的写入速度，GB/s

13.4 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Avexir Technologies Corporation T 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 21
读取速度，GB/s

8.9 18.0
写入速度，GB/s

5.9 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1420 2801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Avexir Technologies Corporation T 4GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Mushkin 991586 2GB

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Crucial Technology BL8G36C16U4BL.M8FE1 8GB

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Smart Modular SMS4WEC3C0K0446SCG 4GB

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Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Samsung M378A1G43DB0-CPB 8GB

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Gloway International Co. Ltd. TYA4U2400D17081C 8GB

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Samsung M471A1G43EB1-CRC 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB