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Samsung M471B5273CH0-CH9 4GB
Corsair CMSX64GX4M2A2666C18 32GB

Samsung M471B5273CH0-CH9 4GB vs Corsair CMSX64GX4M2A2666C18 32GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Corsair CMSX64GX4M2A2666C18 32GB 需要考虑的原因
Corsair CMSX64GX4M2A2666C18 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 48
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Corsair CMSX64GX4M2A2666C18 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 37
  • 读取速度，GB/s
    8.9 left arrow 15.2
  • 写入速度，GB/s
    5.9 left arrow 13.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 3147

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Corsair CMSX64GX4M2A2666C18 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMSX64GX4M2A2666C18 32GB
Corsair CMSX64GX4M2A2666C18 32GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M471A1G43EB1-CPB 8GB
Samsung M471A1G43EB1-CPB 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung M386A4K40BB0-CRC 32GB
Samsung M386A4K40BB0-CRC 32GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM