Samsung M471B5273CH0-CH9 4GB vs Crucial Technology BL8G32C16U4B.M8FE1 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology BL8G32C16U4B.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 48

左右 -66% 更低的延时
更快的读取速度，GB/s

18.3 8.9

测试中的平均数值
更快的写入速度，GB/s

14.8 5.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 29
读取速度，GB/s

8.9 18.3
写入速度，GB/s

5.9 14.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1420 3442

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

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G Skill Intl F4-3000C16-8GTZN 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB