RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
比较
Samsung M471B5273DH0-CH9 4GB vs Crucial Technology BL16G26C16U4B.16FD 16GB
总分
Samsung M471B5273DH0-CH9 4GB
总分
Crucial Technology BL16G26C16U4B.16FD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
需要考虑的原因
Crucial Technology BL16G26C16U4B.16FD 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
47
左右 -57% 更低的延时
更快的读取速度,GB/s
17.2
9.3
测试中的平均数值
更快的写入速度,GB/s
14.5
5.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
47
30
读取速度,GB/s
9.3
17.2
写入速度,GB/s
5.9
14.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1413
3505
Samsung M471B5273DH0-CH9 4GB RAM的比较
Kingston TSB16D3LS1KBG/4G 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Smart Modular SF564128CJ8N6NNSEG 4GB
A-DATA Technology DDR4 3600 2OZ 8GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information AQD-D4U4GN21-SG 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Panram International Corporation PUD31600C114G2VS 4GB
G Skill Intl F4-4600C18-8GTRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD32GX4M4C3466C16W 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C15-4GVR 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4SFS632A 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3600C14-16GVK 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KHX3333C17D4/4GX 4GB
A-DATA Technology DQVE1908 512MB
SK Hynix GKE800UD102408-2133 8GB
报告一个错误
×
Bug description
Source link