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Samsung M471B5273DM0-CH9 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB

Samsung M471B5273DM0-CH9 4GB vs A-DATA Technology AM1U16BC4P2-B19B 4GB

总分
star star star star star
Samsung M471B5273DM0-CH9 4GB

Samsung M471B5273DM0-CH9 4GB

总分
star star star star star
A-DATA Technology AM1U16BC4P2-B19B 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB

差异 规格 评论

差异

Samsung M471B5273DM0-CH9 4GB 需要考虑的原因
Samsung M471B5273DM0-CH9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 84
    左右 64% 更低的延时
  • 更快的读取速度，GB/s
    6.6 left arrow 2.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.0 left arrow 2.4
    测试中的平均数值
A-DATA Technology AM1U16BC4P2-B19B 4GB 需要考虑的原因
A-DATA Technology AM1U16BC4P2-B19B 4GB
报告一个错误
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DM0-CH9 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    30 left arrow 84
  • 读取速度，GB/s
    6.6 left arrow 2.3
  • 写入速度，GB/s
    4.0 left arrow 2.4
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    788 left arrow 469

Samsung M471B5273DM0-CH9 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Kingston HP536726-H41-ELCUW 4GB

A-DATA Technology AM1U16BC4P2-B19B 4GB RAM的比较

A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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