Samsung M471B5273EB0-CK0 4GB vs G Skill Intl F4-3200C16-8GRS 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

G Skill Intl F4-3200C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 40

左右 -18% 更低的延时
更快的读取速度，GB/s

17.4 12.3

测试中的平均数值
更快的写入速度，GB/s

14.3 8.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3200C16-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 34
读取速度，GB/s

12.3 17.4
写入速度，GB/s

8.9 14.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1789 3138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-16GFX 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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A-DATA Technology VDQVE1B16 2GB

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Samsung M471B1G73DB0-YK0 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Kingston KHX3200C20S4/16G 16GB

Kingston KHX3200C20S4/16G 16GB

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Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB