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Samsung M471B5273EB0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB

Samsung M471B5273EB0-CK0 4GB vs Micron Technology 8ATF1G64HZ-2G3B2 8GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Micron Technology 8ATF1G64HZ-2G3B2 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 40
  • 读取速度，GB/s
    12.3 left arrow 13.4
  • 写入速度，GB/s
    8.9 left arrow 10.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 2495

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston CBD24D4S7D8ME-16 16GB
Kingston CBD24D4S7D8ME-16 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 9905663-005.A00G 16GB
Kingston 9905663-005.A00G 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
ISD Technology Limited KD48GU880-32A160X 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK32GX4M4B3866C18 8GB
Corsair CMK32GX4M4B3866C18 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
Crucial Technology CT8G4DFRA32A.C8FP 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Mushkin 99[2/7/4]197F 8GB
Mushkin 99[2/7/4]197F 8GB
内存RAM