Samsung M471B5273EB0-CK0 4GB vs Panram International Corporation W4N2666PS-8G 8GB

总分

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

差异规格评论

差异

Samsung M471B5273EB0-CK0 4GB

需要考虑的原因
Samsung M471B5273EB0-CK0 4GB

报告一个错误

Panram International Corporation W4N2666PS-8G 8GB

需要考虑的原因
Panram International Corporation W4N2666PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 40

左右 -100% 更低的延时
更快的读取速度，GB/s

17.9 12.3

测试中的平均数值
更快的写入速度，GB/s

14.3 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273EB0-CK0 4GB

Panram International Corporation W4N2666PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 20
读取速度，GB/s

12.3 17.9
写入速度，GB/s

8.9 14.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1789 3127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB

Kingston 2GB-DDR2 800Mhz 2GB

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Kingston 9905624-033.A00G 8GB

Kingston 9905624-033.A00G 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Kingston HP669238-071-HYC 4GB

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Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Crucial Technology BLS16G4D26BFSE.16FBD 16GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G