Samsung M471B5673FH0-CF8 2GB vs Crucial Technology BLS8G4S240FSD.M16FAD 8GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 -15% 更低的延时
更快的读取速度，GB/s

15.1 10.6

测试中的平均数值
更快的写入速度，GB/s

11.6 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 26
读取速度，GB/s

10.6 15.1
写入速度，GB/s

6.8 11.6
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1479 2579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Corsair CM2X1024-8500C5D 1GB

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Corsair CMU32GX4M2C3200C16 16GB

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Micron Technology 18ASF1G72AZ-2G1B1 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB