Samsung M471B5673FH0-CF8 2GB vs Micron Technology 16G3200CL22 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

Micron Technology 16G3200CL22 16GB

需要考虑的原因
Micron Technology 16G3200CL22 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 -7% 更低的延时
更快的读取速度，GB/s

14 10.6

测试中的平均数值
更快的写入速度，GB/s

7.3 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Micron Technology 16G3200CL22 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 28
读取速度，GB/s

10.6 14.0
写入速度，GB/s

6.8 7.3
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1479 2663

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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AMD R538G1601U2S 8GB

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Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

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G Skill Intl F4-4266C16-8GTZR 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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G Skill Intl F4-3200C15-16GTZKW 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

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Apacer Technology 78.01GA0.9K5 1GB

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Kingston 99U5428-063.A00LF 8GB

Kingston 9905624-018.A00G 8GB

Kingston 9905624-018.A00G 8GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

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G Skill Intl F4-4400C19-32GTRS 32GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB