Samsung M471B5673FH0-CF8 2GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 19% 更低的延时
更快的读取速度，GB/s

10.6 9.6

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G1A1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB

报告一个错误

更快的写入速度，GB/s

7.8 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 37
读取速度，GB/s

10.6 9.6
写入速度，GB/s

6.8 7.8
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1479 2082

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5673FH0-CF8 2GB

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Micron Technology 36ASF4G72PZ-2G1A1 32GB

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Crucial Technology CB8GS2400.C8D 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Samsung M471A2K43BB1-CTD 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

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Crucial Technology RM51264BA1339.16FR 4GB

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Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 9905701-022.A00G 16GB

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Samsung M3 78T2863QZS-CF7 1GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB