RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5673FH0-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Samsung M471B5673FH0-CF8 2GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB 需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 12.2
  • 写入速度，GB/s
    6.8 left arrow 9.3
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 2382

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMW16GX4M1Z3600C18 16GB
Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMD32GX4M4C3200C14M 8GB
Corsair CMD32GX4M4C3200C14M 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
Kingston KF3200C16D4/8GX 8GB
Kingston KF3200C16D4/8GX 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMT64GX4M2C3600C18 32GB
Corsair CMT64GX4M2C3600C18 32GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMSX32GX4M2A2400C16 16GB
Corsair CMSX32GX4M2A2400C16 16GB
内存RAM
Crucial Technology BL16G26C16U4R.16FE 16GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
内存RAM