Samsung M471B5673FH0-CF8 2GB vs Samsung M471B5773EB0-CK0 2GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Samsung M471B5773EB0-CK0 2GB

Samsung M471B5773EB0-CK0 2GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 67

左右 55% 更低的延时
更快的读取速度，GB/s

10.6 5.4

测试中的平均数值
更快的写入速度，GB/s

6.8 3.6

测试中的平均数值

Samsung M471B5773EB0-CK0 2GB

需要考虑的原因
Samsung M471B5773EB0-CK0 2GB

报告一个错误

更高的内存带宽，mbps

12800 8500

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5773EB0-CK0 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

30 67
读取速度，GB/s

10.6 5.4
写入速度，GB/s

6.8 3.6
内存带宽，mbps

8500 12800

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1066 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1479 644

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905403-090.A01LF 4GB

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Crucial Technology BLS8G4D240FSE.16FAR 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N