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Samsung M471B5773CHS-CH9 2GB
Samsung M471B5773CHS-CH9 2GB
比较
Samsung M471B5773CHS-CH9 2GB vs Samsung M471B5773CHS-CH9 2GB
总分
Samsung M471B5773CHS-CH9 2GB
总分
Samsung M471B5773CHS-CH9 2GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5773CHS-CH9 2GB
报告一个错误
需要考虑的原因
Samsung M471B5773CHS-CH9 2GB
报告一个错误
规格
完整的技术规格清单
Samsung M471B5773CHS-CH9 2GB
Samsung M471B5773CHS-CH9 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
31
31
读取速度,GB/s
9.8
9.8
写入速度,GB/s
6.7
6.7
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1304
1304
Samsung M471B5773CHS-CH9 2GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
Samsung M471B5773CHS-CH9 2GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Hexon Technology Pte Ltd HEXON 1GB
Panram International Corporation W4U2666P-8G 8GB
Kingston KHX1600C9S3L/4G 4GB
Samsung M386A8K40CM2-CRC 64GB
Kingston K1N7HK-ELC 2GB
Kingston 9905700-026.A00G 8GB
Kingston 99U5315-023.A00LF 512MB
G Skill Intl F4-2666C15-8GVR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Mushkin MB[A/B]4U240FFFF16G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMU16GX4M2C3200C16 8GB
Samsung M471B5773CHS-CH9 2GB
Samsung M471B5773CHS-CH9 2GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMT64GX4M4C3200C16 16GB
Kingston 9905584-016.A00LF 4GB
Apacer Technology GD2.1542WS.001 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3000C14-8GVR 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Apacer Technology D12.2356WS.001 8GB
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Bug description
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