SK Hynix DDR2 800 2G 2GB vs Corsair CMW8GX4M1Z3200C16 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

Corsair CMW8GX4M1Z3200C16 8GB

需要考虑的原因
Corsair CMW8GX4M1Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 77

左右 -185% 更低的延时
更快的写入速度，GB/s

15.3 1,884.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Corsair CMW8GX4M1Z3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 27
读取速度，GB/s

2,936.9 17.3
写入速度，GB/s

1,884.0 15.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

564 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix DDR2 800 2G 2GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology BLT4G4D30AETA.K8FE 4GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingston KF3600C16D4/16GX 16GB

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Samsung M393B1G70BH0-YK0 8GB

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G Skill Intl F4-3333C16-16GTZSK 16GB

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Samsung M393B5170FH0-CK0 4GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Kingston 9905403-134.A00LF 2GB

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Hewlett-Packard 7EH99AA# 16GB