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SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB vs Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB

Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 2
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    72 left arrow 77
    左右 -7% 更低的延时
  • 更快的写入速度，GB/s
    703.4 left arrow 1,884.0
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    77 left arrow 72
  • 读取速度，GB/s
    2,936.9 left arrow 2,733.6
  • 写入速度，GB/s
    1,884.0 left arrow 703.4
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    564 left arrow 433

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB RAM的比较

Samsung M378A5143EB1-CPB 4GB
Apacer Technology GD2.0918CT.001 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Avant Technology W641GU42J5213NC 8GB
Avant Technology W641GU42J5213NC 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK32GX4M4C3000C15 8GB
Corsair CMK32GX4M4C3000C15 8GB
内存RAM
SK Hynix HMT41GU6BFR8A-PB 8GB
SK Hynix HMT41GU6BFR8A-PB 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZR 16GB
G Skill Intl F4-3333C16-16GTZR 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3000C16/16GX 16GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Corsair CMU32GX4M4D3000C16 8GB
Corsair CMU32GX4M4D3000C16 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C17-8GTRS 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905630-039.A00G 16GB
Kingston 9905630-039.A00G 16GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
内存RAM