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SK Hynix DDR2 800 2G 2GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB

SK Hynix DDR2 800 2G 2GB vs Micron Technology 72ASS4G72LZ-2G1A1 32GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
Micron Technology 72ASS4G72LZ-2G1A1 32GB 需要考虑的原因
Micron Technology 72ASS4G72LZ-2G1A1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 77
    左右 -97% 更低的延时
  • 更快的读取速度，GB/s
    8.8 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.7 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 39
  • 读取速度，GB/s
    2,936.9 left arrow 8.8
  • 写入速度，GB/s
    1,884.0 left arrow 7.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    564 left arrow 2083

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK64GX4M82800C14 8GB
Corsair CMK64GX4M82800C14 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Samsung M471B1G73BH0-CK0 8GB
Samsung M471B1G73BH0-CK0 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMK32GX4M4K4333C19 8GB
Corsair CMK32GX4M4K4333C19 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-2400C15-8GRK 8GB
G Skill Intl F4-2400C15-8GRK 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM