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Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M471A2K43DB1-CWE 16GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB vs Samsung M471A2K43DB1-CWE 16GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

总分
star star star star star
Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

差异 规格 评论

差异

Micron Technology 8ATF1G64HZ-2G6E1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 37
    左右 3% 更低的延时
Samsung M471A2K43DB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2 更高的带宽

规格

完整的技术规格清单
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M471A2K43DB1-CWE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 37
  • 读取速度，GB/s
    15.0 left arrow 15.8
  • 写入速度，GB/s
    11.5 left arrow 13.5
  • 内存带宽，mbps
    21300 left arrow 25600
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2664 left arrow 3075

Micron Technology 8ATF1G64HZ-2G6E1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A2K43DB1-CWE 16GB RAM的比较

Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMD32GX4M4B3600C16 8GB
内存RAM
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix HMA84GR7AFR4N-UH 32GB
SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMD32GX4M4B3333C16 8GB
Corsair CMD32GX4M4B3333C16 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMD16GX4M4B3200C16-R 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Transcend Information JM2666HLE-16G 16GB
Transcend Information JM2666HLE-16G 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMK16GX4M2Z2933C16 8GB
Corsair CMK16GX4M2Z2933C16 8GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
内存RAM