Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M471A2K43DB1-CWE 16GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB vs Samsung M471A2K43DB1-CWE 16GB

Overall score
star star star star star
Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Overall score
star star star star star
Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 37
    Around 3% lower latency
  • Faster reading speed, GB/s
    15.8 left arrow 15
    Average value in the tests
  • Faster write speed, GB/s
    13.5 left arrow 11.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Samsung M471A2K43DB1-CWE 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 37
  • Read speed, GB/s
    15.0 left arrow 15.8
  • Write speed, GB/s
    11.5 left arrow 13.5
  • Memory bandwidth, mbps
    21300 left arrow 25600
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2664 left arrow 3075
RAM Latency Calculator
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