SK Hynix DDR2 800 2G 2GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 15.6

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更快的写入速度，GB/s

12.1 1,884.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

2,936.9 15.6
写入速度，GB/s

1,884.0 12.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

564 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Panram International Corporation W4U2400PS-8G 8GB

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Kingston 99U5469-045.A00LF 4GB

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Corsair CM4X16GE2933C19S2 16MB

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Kingston 99U5474-022.A00LF 2GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMK64GX4M4B3333C16 16GB

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905678-024.A00G 4GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Corsair CMSO16GX4M2A2133C15 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology BLM8G44C19U4B.M8FE1 8GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905665-011.A00G 4GB

Kingston 9905665-011.A00G 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB