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SK Hynix HMA425S6BJR6N-UH 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
比较
SK Hynix HMA425S6BJR6N-UH 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
总分
SK Hynix HMA425S6BJR6N-UH 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB
报告一个错误
更快的读取速度,GB/s
14.2
13.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
101
左右 -274% 更低的延时
更快的写入速度,GB/s
9.8
7.0
测试中的平均数值
规格
完整的技术规格清单
SK Hynix HMA425S6BJR6N-UH 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
101
27
读取速度,GB/s
14.2
13.8
写入速度,GB/s
7.0
9.8
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1313
2323
SK Hynix HMA425S6BJR6N-UH 2GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB RAM的比较
Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CML16GX3M2A1600C10 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
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G Skill Intl F4-5333C22-8GTRG 8GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
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Kingston 9905744-076.A00G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung M471B5273DH0-CH9 4GB
Avant Technology W644GU44J2320NH 32GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
报告一个错误
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