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SK Hynix HMA451U6AFR8N-TF 4GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

SK Hynix HMA451U6AFR8N-TF 4GB vs Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

总分
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分
star star star star star
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

差异 规格 评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 10.6
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 21
  • 读取速度，GB/s
    14.7 left arrow 17.6
  • 写入速度，GB/s
    10.6 left arrow 12.2
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2438 left arrow 3126

SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
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AMD AE34G1601U1 4GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471A2G43BB2-CWE 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
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TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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Crucial Technology BLS4G4D240FSB.M8FBD 4GB
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SpecTek Incorporated ?????????????????? 2GB
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Kingston ACR21D4S15HAG/8G 8GB
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Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
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Crucial Technology BLS8G4D240FSA.16FAD 8GB
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Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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A-DATA Technology AM1P24HC8T1-BBJS 8GB
内存RAM
Samsung M391B1G73QH0-YK0 8GB
Samsung M391B1G73QH0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
内存RAM
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Crucial Technology BLT16G4D30AETA.K16FB 16GB
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Corsair CM4X8GD3200C16K4 8GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
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Crucial Technology CT8G4SFS824A.C8FHD1 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905700-013.A00G 8GB
Kingston 9905700-013.A00G 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Mushkin 99[2/7/4]200[F/T] 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM