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SK Hynix HMA851U6DJR6N-XN 4GB
Samsung M378A5143DB0-CPB 4GB

SK Hynix HMA851U6DJR6N-XN 4GB vs Samsung M378A5143DB0-CPB 4GB

总分
star star star star star
SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

总分
star star star star star
Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异 规格 评论

差异

SK Hynix HMA851U6DJR6N-XN 4GB 需要考虑的原因
SK Hynix HMA851U6DJR6N-XN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 11% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 14.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Samsung M378A5143DB0-CPB 4GB 需要考虑的原因
Samsung M378A5143DB0-CPB 4GB
报告一个错误

规格

完整的技术规格清单
SK Hynix HMA851U6DJR6N-XN 4GB
Samsung M378A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    32 left arrow 36
  • 读取速度，GB/s
    15.9 left arrow 14.4
  • 写入速度，GB/s
    10.6 left arrow 10.6
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2240 left arrow 2490

SK Hynix HMA851U6DJR6N-XN 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M378A5143DB0-CPB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
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Corsair CMRX8GD3000C16R4D 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
内存RAM
Corsair CMX8GX3M2B1600C9 4GB
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Kingston KHX1600C9D3/4GX 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
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内存RAM
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内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
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Nanya Technology M2X8G64CB8HB5N-DG 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
内存RAM
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G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
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Micron Technology 9905625-004.A03LF 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston HP32D4U8S8ME-8X 8GB
内存RAM