RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT325S6CFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

SK Hynix HMT325S6CFR8C-H9 2GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 50
    左右 14% 更低的延时
Gloway International Co. Ltd. TYA4U2666D19161C 16GB 需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
报告一个错误
  • 更快的读取速度，GB/s
    12.5 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 50
  • 读取速度，GB/s
    10.7 left arrow 12.5
  • 写入速度，GB/s
    6.8 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 2326

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Kingston MSI24D4U7D8MH-16 16GB
Kingston MSI24D4U7D8MH-16 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9965669-032.A00G 16GB
Kingston 9965669-032.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Kingston MSI24D4S7D8MHMH6 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Essencore Limited IM48GU48N21-FFFHM 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston XF875V-MIH 8GB
Kingston XF875V-MIH 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
内存RAM
Kingston 9965525-010.A00LF 4GB
Kingston 9965525-010.A00LF 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM