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SK Hynix HMT325S6CFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
比较
SK Hynix HMT325S6CFR8C-H9 2GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB
总分
SK Hynix HMT325S6CFR8C-H9 2GB
总分
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
低于PassMark测试中的延时,ns
43
50
左右 14% 更低的延时
需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
报告一个错误
更快的读取速度,GB/s
12.5
10.7
测试中的平均数值
更快的写入速度,GB/s
7.3
6.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
50
读取速度,GB/s
10.7
12.5
写入速度,GB/s
6.8
7.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1314
2326
SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA851S6DJR6N-VK 4GB
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Kingston HP32D4U8S8HC-8XR 8GB
报告一个错误
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Bug description
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