RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT325S6CFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

SK Hynix HMT325S6CFR8C-H9 2GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 50
    左右 14% 更低的延时
Gloway International Co. Ltd. TYA4U2666D19161C 16GB 需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
报告一个错误
  • 更快的读取速度，GB/s
    12.5 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 50
  • 读取速度，GB/s
    10.7 left arrow 12.5
  • 写入速度，GB/s
    6.8 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 2326

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905703-009.A00G 16GB
Kingston 9905703-009.A00G 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2666C15-8GRR 8GB
G Skill Intl F4-2666C15-8GRR 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Samsung M386A8K40CM2-CRC 64GB
Samsung M386A8K40CM2-CRC 64GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
G Skill Intl F4-3600C18-8GTRG 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Kingston MSI24D4S7D8MHMH6 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMW64GX4M4C3200C16 16GB
Corsair CMW64GX4M4C3200C16 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM