RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT325S6CFR8C-PB 2GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
比较
SK Hynix HMT325S6CFR8C-PB 2GB vs A-DATA Technology AO1P26KCST2-BZISHC 16GB
总分
SK Hynix HMT325S6CFR8C-PB 2GB
总分
A-DATA Technology AO1P26KCST2-BZISHC 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
需要考虑的原因
A-DATA Technology AO1P26KCST2-BZISHC 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
38
左右 -6% 更低的延时
更快的读取速度,GB/s
15.5
10.9
测试中的平均数值
更快的写入速度,GB/s
14.2
6.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
38
36
读取速度,GB/s
10.9
15.5
写入速度,GB/s
6.6
14.2
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1406
2938
SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325S6CFR8C-PB 2GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3600C19-16GSXF 16GB
Samsung M471B1G73DB0-YK0 8GB
INTENSO GKE800UD102408-2133 8GB
Corsair CMX4GX3M1A1333C9 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3600C16-8GTRGC 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Crucial Technology CT102464BA160B.M16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMK16GX4M4B3300C16 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M378A2K43BB1-CPB 16GB
PNY Electronics PNY 2GB
Kingston KHX2400C1C14/16G 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
报告一个错误
×
Bug description
Source link