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SK Hynix HMT351S6BFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
比较
SK Hynix HMT351S6BFR8C-H9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
总分
SK Hynix HMT351S6BFR8C-H9 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT351S6BFR8C-H9 4GB
报告一个错误
更快的读取速度,GB/s
8.2
7.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
49
左右 -20% 更低的延时
更快的写入速度,GB/s
6.1
5.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT351S6BFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
49
41
读取速度,GB/s
8.2
7.8
写入速度,GB/s
5.2
6.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1223
1512
SK Hynix HMT351S6BFR8C-H9 4GB RAM的比较
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM的比较
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT351S6BFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Kingston 9905403-515.A00LF 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Wilk Elektronik S.A. GR2400D464L17S/8G 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905702-019.A00G 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2K4000C19 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Gloway International (HK) STK4U2133D15081C 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology 11137401 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Kingston K1N7HK-ELC 2GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
报告一个错误
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Bug description
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