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SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M471B5773CHS-CF8 2GB

SK Hynix HMT425S6CFR6A-PB 2GB vs Samsung M471B5773CHS-CF8 2GB

总分
star star star star star
SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

总分
star star star star star
Samsung M471B5773CHS-CF8 2GB

Samsung M471B5773CHS-CF8 2GB

差异 规格 评论

差异

SK Hynix HMT425S6CFR6A-PB 2GB 需要考虑的原因
SK Hynix HMT425S6CFR6A-PB 2GB
报告一个错误
  • 更快的读取速度，GB/s
    10.1 left arrow 5.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.1 left arrow 3.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 8500
    左右 1.51% 更高的带宽
Samsung M471B5773CHS-CF8 2GB 需要考虑的原因
Samsung M471B5773CHS-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 -41% 更低的延时

规格

完整的技术规格清单
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M471B5773CHS-CF8 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    41 left arrow 29
  • 读取速度，GB/s
    10.1 left arrow 5.7
  • 写入速度，GB/s
    7.1 left arrow 3.0
  • 内存带宽，mbps
    12800 left arrow 8500
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1066 MHz
  • 排名PassMark (越多越好)
    1484 left arrow 609

SK Hynix HMT425S6CFR6A-PB 2GB RAM的比较

Ramaxel Technology RMT3170MP68F9F1600 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Samsung M471B5773CHS-CF8 2GB RAM的比较

Samsung M471B5173BH0-CK0 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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