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SK Hynix HMT451S6BFR8A-PB 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
比较
SK Hynix HMT451S6BFR8A-PB 4GB vs Gloway International Co. Ltd. TYA4U2400D17081C 8GB
总分
SK Hynix HMT451S6BFR8A-PB 4GB
总分
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
需要考虑的原因
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
44
左右 -83% 更低的延时
更快的读取速度,GB/s
17.1
12.3
测试中的平均数值
更快的写入速度,GB/s
12.8
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
24
读取速度,GB/s
12.3
17.1
写入速度,GB/s
7.8
12.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1977
3257
SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Team Group Inc. Team-Value-800 2GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1P32MCST2-BZPS 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
V-GEN D4H8GS24A8 8GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
AMD R5316G1609U2K 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3600C14-16GTZR 16GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
AMD AE34G1601U1 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
报告一个错误
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