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SK Hynix HMT451S6BFR8A-PB 4GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 44
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 39
  • 读取速度，GB/s
    12.3 left arrow 15.7
  • 写入速度，GB/s
    7.8 left arrow 11.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2725

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Corsair CMD32GX4M2A2666C15 16GB
内存RAM
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
Corsair CM4X16GC3200C16K2 16GB
Corsair CM4X16GC3200C16K2 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-3466C16-4GVK 4GB
G Skill Intl F4-3466C16-4GVK 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Apacer Technology 78.DAGNN.4030B 16GB
Apacer Technology 78.DAGNN.4030B 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905712-048.A00G 16GB
Kingston 9905712-048.A00G 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C16-8GRS 8GB
G Skill Intl F4-3200C16-8GRS 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C16-8GTRGC 8GB
G Skill Intl F4-3600C16-8GTRGC 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
内存RAM