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SK Hynix HMT451S6BFR8A-PB 4GB
Kingston HP24D4U7S8MBP-4 4GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Kingston HP24D4U7S8MBP-4 4GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Kingston HP24D4U7S8MBP-4 4GB

Kingston HP24D4U7S8MBP-4 4GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 47
    左右 6% 更低的延时
Kingston HP24D4U7S8MBP-4 4GB 需要考虑的原因
Kingston HP24D4U7S8MBP-4 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston HP24D4U7S8MBP-4 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 47
  • 读取速度，GB/s
    12.3 left arrow 15.8
  • 写入速度，GB/s
    7.8 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2401

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Kingston HP24D4U7S8MBP-4 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G6672 2GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Kingston ACR24D4S7D8MB-16 16GB
Kingston ACR24D4S7D8MB-16 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston 9905624-033.A00G 8GB
Kingston 9905624-033.A00G 8GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Panram International Corporation R748G2133U2S 8GB
Panram International Corporation R748G2133U2S 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Hewlett-Packard 48U45AA# 16GB
Hewlett-Packard 48U45AA# 16GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM