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SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB

SK Hynix HMT451S6BFR8A-PB 4GB vs Micron Technology 36ASF4G72PZ-2G3B1 32GB

总分
star star star star star
SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G3B1 32GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB

差异 规格 评论

差异

SK Hynix HMT451S6BFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 52
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    12.3 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 7.7
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G3B1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3B1 32GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 52
  • 读取速度，GB/s
    12.3 left arrow 10.0
  • 写入速度，GB/s
    7.8 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1977 left arrow 2260

SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较

Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB

Micron Technology 36ASF4G72PZ-2G3B1 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Corsair CMD32GX4M2A2800C16 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
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SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
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Kingston 9965525-140.A00LF 8GB
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G Skill Intl F4-3733C17-8GTZKW 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
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内存RAM
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Kingston 9905471-002.A00LF 2GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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Corsair CMD16GX4M4B3333C16 4GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
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内存RAM
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM